Selective Deposition Process Combining PEALD and ALE Presentation: Christophe Vallée, Univ. Grenoble Alpes, CNRS, France, 31 min 7 sec
ALD for Perovskite Solar Cells: Merits, Benefits and Challenges Presentation: Adriana Creatore, Eindhoven University of Technology, Netherlands, 31 min 54 sec
Atomic Layer Deposition of NbC-Al2O3 Nanocomposite Films for Efficient Solar Selective Coatings Presentation: Jason Avila, Argonne National Laboratory, 13 min 0 sec
Refractory Solar Selective Nanocomposite Coatings for Concentrated Solar Power Receivers Presentation: Jeffrey Elam, Argonne National Laboratory, 14 min 59 sec
P-type Bismuth Sulfide (Bi2S3) Grown by Atomic Layer Deposition Presentation: Neha Mahuli, Indian Institute of Technology Bombay, India, 16 min 53 sec
Role of Fixed Charge in the Modification of Schottky Barrier Height of Metal Insulator Semiconductor Tunnel Structures Presentation: Roderick Marstell, Lehigh University, 15 min 12 sec
Determination of Energy Barrier Heights between Amorphous Metals and ALD Dielectrics using Internal Photoemission Spectroscopy Presentation: Melanie Jenkins, Oregon State University, 14 min 0 sec
Atomic Layer Deposition of Bismuth Vanadate Photoanodes Presentation: Ashley Bielinski, University of Michigan, USA, 15 min 22 sec
High-Efficiency Perovskite Solar Cells with Humidity-Stability beyond 60 Days Achieved via Atomic Layer Deposition Presentation: Dibyashree Koushik, Eindhoven University of Technology, Netherlands, 16 min 50 sec
Efficient Surface Passivation of Black Silicon Using Spatial ALD Presentation: Emma Salmi, Beneq Oy, Finland, 15 min 13 sec
Enhancing Water Oxidation Activity of α-hematite Through Atomic Layer Deposition Presentation: Bin Shan, Huazhong University of Science and Technology, China, 14 min 52 sec
ALD Stabilization Layers for Quantum Dot Solar Energy Conversion Presentation: Theodore Kraus, University of Wyoming, 14 min 48 sec
Atomic Layer Deposited Ta-doped ZrO2 for DRAM Capacitors Presentation: Bo-Eun Park, Yonsei University, Republic of Korea, 12 min 39 sec
High Capacitance 3D MIM Structures Achieved by ALD Deposited TiO2 for Advanced DRAM Applications Presentation: Ahmad Chaker, Univ. Grenoble Alpes, CNRS, France, 14 min 56 sec
Seed-layer Effects on the Crystallization and Electrical Characteristics of ALD-grown Ta2O5 Thin Films Presentation: Jae Hyoung Choi, Samsung Electronics, Korea, Republic of Korea, 13 min 8 sec
Electrode Induced Variation in Voltage Nonlinearity of ALD Al2O3 and HfO2 Metal-Insulator-Metal Capacitors (MIMCAPs) Presentation: Dustin Austin, Oregon State University, 16 min 23 sec
High-Voltage Nanolaminate Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes using ALD Al2O3 and Ta2O5 Presentation: Konner Holden, Oregon State University, 12 min 13 sec
Capacitance Maximization of Ultra-thin Si-capacitors by Atomic Layer Deposition of Anti-ferroelectric HfO2 in High Aspect Ratio Structures Presentation: Stefan Riedel, Fraunhofer IPMS, Germany, 16 min 11 sec
Ferroelectricity in Ternary HfO2-ZrO2-La2O3 Mixed Oxide Grown by ALD Presentation: Anna Chernikova, Moscow Institute of Physics and Technology, Russian Federation, 17 min 34 sec
A Study on the Oxygen Source and Annealing Temperature Effects of Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films Presentation: Si Joon Kim, University of Texas at Dallas, Jaidah Mohan, The University of Texas at Dallas, 16 min 44 sec
Pyroelectric Response in Thin Ferroelectric (Hf,Zr)O2 Presentation: Sean Smith, Sandia National Laboratories, 13 min 52 sec
ALD as a Primary Contributor Towards Enabling Key Materials in the Memory Roadmap Presentation: John Smythe, Micron Technology, 31 min 36 sec
Plasma-Enhanced Atomic Layer Deposition of Oxygen Deficient TaOx Thin Films for Resistive Switching Memory Applications Presentation: Konstantin Egorov, Moscow Institute of Physics and Technology, Russian Federation, 15 min 14 sec
Monitoring Resistive Switching Properties of ALD Grown Al2O3/HfO2 Nanolaminate Presentation: Marceline Bonvalot, LETI-LTM, France, 14 min 43 sec