Real-time Grazing Incidence Small-angle X-ray Scattering Studies of Indium Aluminum Nitride Growth Presentation: Jeffrey M. Woodward, ASEE (residing at U.S. Naval Research Laboratory), 15 min 12 sec
Expanding the Materials Library of Sequential Infiltration Synthesis: Conductive Indium and Gallium Oxides Grown in Polymers Presentation: Ruben Waldman, University of Chicago, 18 min 54 sec
Highly Efficient and Stable Organic – Inorganic Halide Perovskite Solar Cells with ALD-grown Charge Transport Layers Presentation: Hyunjung Shin, Sungkyunkwan University, Republic of Korea, Nothing uploaded yet
Analyses of Hexafluoroacetylacetone (Hfac) Adsorbed on Transition Metal Surfaces Presentation: Tomoko Ito, Osaka University, Japan, 30 min 28 sec
Thermal Atomic Layer Etching of Silicon Nitride using an Oxidation and “Conversion-Etch” Mechanism Presentation: Aziz Abdulagatov, University of Colorado - Boulder, 13 min 16 sec
Thermal Dry Atomic Layer Etching of Cobalt with Sequential Exposure to Molecular Chlorine and Diketones Presentation: Andrew Teplyakov, University of Delaware, 3 min 51 sec
Spontaneous Etching of B2O3 and TiO2 by HF: Removal Reaction in WO3 ALE and TiN ALE Presentation: Austin Cano, University of Colorado - Boulder, 11 min 43 sec
Thermal Based Atomic Layer Etching of Aluminum Oxide and Titanium Nitride Presentation: Varun Sharma, ASM, Finland, 14 min 43 sec
Thermal Atomic Layer Etching of Amorphous and Crystalline Hafnium Oxide, Zirconium Oxide and Hafnium Zirconium Oxide Presentation: Jessica A. Murdzek, University of Colorado - Boulder, 16 min 31 sec
Isotropic Atomic Layer Etching of Cobalt with Smooth Etched Surfaces by using Cyclic Repetition of Plasma Oxidation and Organometallization Presentation: Sumiko Fujisaki, Hitachi R&D Group, Japan, 13 min 49 sec
Atomic Layer Etching for Germanium using Halogen Neutral Beam =Comparison between Br and Cl Chemistry= Presentation: Daisuke Ohori, Tohoku University, Japan, 23 min 50 sec
A New Etching / Passivation Process in Cyclic Mode for Spacer Etching in 3D CMOS Integrations Presentation: Valentin Bacquie, CEA-LETI, France, 16 min 10 sec
Atomic Layer Etching of Transition Metals with Gas Cluster Ion Beam Irradiation and Acetylacetone Presentation: Noriaki Toyoda, University of Hyogo, Japan, 17 min 14 sec
Atomic Layer Etching at Atmospheric Pressure Presentation: Eugen Shkura, University of Wuppertal, Germany, 13 min 9 sec
Atomic Layer Etching of Nanostructures Presentation: Sabbir Khan, Niels Bohr Institute, University of Copenhagen, Denmark, 30 min 48 sec
Selectivity during Plasma ALE of Si-Compounds: Reaction Mechanism Studied by in-situ Surface Spectroscopy Presentation: René Vervuurt, ASM, 13 min 33 sec
Chamber Vacuum Strategies to Enable High Productivity ALE Presentation: Declan Scanlan, Edwards Vacuum, Ireland, 14 min 11 sec
Mechanistic Study of the Thermal Atomic Layer Etch of Cobalt Metal Using Propene and CO Presentation: Patrick Theofanis, Intel Corp., 14 min 12 sec
Selective Quasi-ALE of SiO2 over Si3N4 via Bottom-up Si3N4 Passivation: A Computational Study Presentation: Du Zhang, TEL Technology Center, America, LLC, 12 min 18 sec
Insights of Different Etching Properties between CW and ALE Processes using 3D Voxel-Slab Model Presentation: Nobuyuki Kuboi, Sony Semiconductor Solutions Corp., Japan, 29 min 27 sec
First-principles Understanding of Atomic Layer Etching of Silicon Nitride using Hydrofluorocarbons Presentation: Gyeong Hwang, University of Texas at Austin, 14 min 20 sec
An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching Presentation: Luiz Felipe Aguinsky, TU Wien, Austria, 17 min 5 sec
Thermodynamics-Based Screening Approach for Atomic Layer Etching Presentation: Nagraj Kulkarni, Consultant, 17 min 15 sec
Always in Competition: Self-limiting Versus Continuous Reactions in ALD and ALEt Presentation: Simon D. Elliott, Schrödinger, Inc., Ireland, 17 min 17 sec
Molecular Layer Deposition of Titanicone Films using TiCl and Fumaric or Maleic Acid: Growth Mechanism and Ambient Stability Presentation: Yan-Qiang Cao, Nanjing University, China, 13 min 38 sec